Spin-relaxation process of holes in type-IIAl0.34Ga0.66As/AlAs multiple quantum wells
نویسندگان
چکیده
منابع مشابه
Spin relaxation in n-InSb/AlInSb quantum wells
We have used time resolved spectroscopy to measure the relaxation of spin polarization in InSb/AlInSb quantum wells (QWs) as a function of temperature and mobility. The results are consistent with the D’yakonov–Perel (DP) mechanism for high mobility samples over the temperature range from 50 to 300 K. For low mobility samples at high temperature the Elliott–Yafet and DP mechanisms become compar...
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We report theoretical and experimental studies of ambipolar spin diffusion in a semiconductor. A circularly polarized laser pulse is used to excite spin-polarized carriers in a GaAs multiple quantum-well sample at 80 K. Diffusion of electron and spin densities is simultaneously measured using a spatially and temporally resolved pump-probe technique. Two regimes of diffusion for spin-polarized e...
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M. Griesbeck,1 M. M. Glazov,2,* E. Ya. Sherman,3 D. Schuh,1 W. Wegscheider,4 C. Schüller,1 and T. Korn1,† 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany 2Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia 3Department of Physical Chemistry, The University of the Basque Country UPV/EHU, 48080 Bilb...
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Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases s2DEGsd formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key parameter for these applications is the spin relaxation time. Here we apply the theory of D’yakonov and Perel’ sDPd to calculate the electron spin resonance...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1993
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.47.10452